Intel StrataFlashTM Memory Technology
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electronics seminars
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20-12-2009, 12:17 PM



.pdf   Intel StrataFlashTM Memory Technology.pdf (Size: 857.76 KB / Downloads: 101)
.pdf   Intel StrataFlashTM Memory Technology.pdf (Size: 857.76 KB / Downloads: 101)
Abstract
The Intel StrataFlash memory technology represents a cost breakthrough for flash memory devices by enabling the storage of two bits of data in a single flash memory transistor. This seminar and presentation will discuss the evolution of the two bit/cell technology from conception to production, Flash memory devices are now found in virtually every PC and cellular phone and are one of the key components of the emerging digital imaging and audio markets. Cost per bit reduction of flash memory devices has been traditionally achieved by aggressive scaling of the memory cell transistor using silicon process-scaling techniques such as photolithography line width reduction. In an attempt to accelerate the rate of cost reduction beyond that achieved by process scaling,. The Intel StrataFlash two bit/cell memory technology is the first output of the multi-bit per cell storage effort. By storing two bits in a single memory transistor, the memory cell area is effectively cut in half allowing the storage of twice as much data in the same area as the standard single bit per cell technology
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