e clothing
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anuja shree
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#1
05-02-2010, 06:50 PM


plzz post the details soon
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project report tiger
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#2
05-02-2010, 09:02 PM

The e-cloth is a type of cloth woven with conductive fibers and can be designed to

support a variety of electronic components such as tiny
circuits, sensors, and wireless communication devices,and like other kinds of

fabrics, the electronic cloth can be possible to sewn many shapes, such as a bag or a

tag..etc,Once fashioned into the appropriate device the cloth can be programmed to

respond differently to a variety of situation,like If it were a bag used to secure a

laptop computer made of e-cloth ,and the owner link it via wireless technology to an

already existing alarm system, which can sound off if the bag is moved or tampered,

used to embed sensing, actuation and displays into clothing and surface coverings.

and also can be used to embed sensing, actuation and displays into clothing and

surface coverings.

e-cloth built by plastic pentacene transistors directly on cloth fibers In a process that is compatible with textile manufacturing, the transistors were

fabricated using a 125 µm diameter aluminum wire as the gate line. In practice, this

wire may be directly woven into an e-textile to serve as a gate interconnect.

Interestingly, the transistors were fabricated without conventional lithography.

Instead, accomplishing natural pattern of textiles patterning via shadowing from

over-woven fibers. The fiber was masked with orthogonal over-woven 50 µm diameter

wires (Figure ). These served as channel masks; a transistor was formed at every

intersection. 100 nm gold was evaporated to form source/drain contacts.and

transistors were patterned via shadowing from over-woven fibers. The fiber was masked

with orthogonal over-woven 50 µm diameter wires.Upon removal of the over-woven

fibers, arrays of transistors resulted, with a transistor formed at every

intersection. All transistors were ~125/50 µm, since transistors were only formed on

the surface of the gate wire exposed during pentacene evaporation. The resulting

transistors are similar to conventional inverted top-contacted pentacene thin-film

transistors (TFTs). However, the entire transistor was formed on a metallic gate

wire, assuring easy e-textile integration. Electron mobilities were >0.01 cm2/V-sec

at 20 V.
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